? semiconductor components industries, llc, 2000 november, 2000 rev. 1 1 publication order number: ntp10n40/d ntp10n40, NTB10N40 preferred device advance information power mosfet 10 amps, 400 volts nchannel to220 and d 2 pak designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. features ? higher current rating ? lower r ds(on) ? lower capacitances ? lower total gate charge ? tighter v sd specifications ? avalanche energy specified typical applications ? switch mode power supplies ? pwm motor controls ? converters ? bridge circuits maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit drainsource voltage v dss 400 vdc draingate voltage (r gs = 1.0 m w ) v dgr 400 vdc gatesource voltage continuous nonrepetitive (t p 10 ms) v gs v gsm 20 40 vdc drain continuous continuous @ 100 c single pulse (t p 10 m s) i d i d i dm 10 7.5 35 adc total power dissipation derate above 25 c p d 142 1.14 watts w/ c operating and storage temperature range t j , t stg 55 to 150 c single draintosource avalanche energy starting t j = 25 c (v dd = 100 vdc, v gs = 10 vdc, i l = 10 a, l = 10 mh, r g = 25 w ) e as 500 mj thermal resistance junctiontocase junctiontoambient junctiontoambient (note 1.) r q jc r q ja r q ja 0.88 62.5 50 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. this document contains information on a new product. specifications and information herein are subject to change without notice. 10 amperes 400 volts r ds(on) = 500 m w preferred devices are recommended choices for future use and best overall value. device package shipping ordering information ntp10n40 to220ab 50 units/rail to220ab case 221a style 5 1 2 3 4 http://onsemi.com nchannel d s g marking diagrams and pin assignments ntx10n40 = device code ll = location code y = year ww = work week ntp10n40 llyww gate source drain drain NTB10N40 llyww gate source drain drain 1 2 3 4 d 2 pak case 418b style 2 NTB10N40 d 2 pak 50 units/rail NTB10N40t4 d 2 pak 800/tape & reel
ntp10n40, NTB10N40 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 0.25 madc) temperature coefficient (positive) v (br)dss 400 475 vdc mv/ c zero gate voltage collector current (v ds = 400 vdc, v gs = 0 vdc) (v ds = 400 vdc, v gs = 0 vdc, t j =125 c) i dss 10 100 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0) i gss(f) i gss(r) 100 100 nadc on characteristics (note 2.) gate threshold voltage i d = 0.25 ma, v ds = v gs temperature coefficient (negative) v gs(th) 2.0 2.5 6.5 4.0 vdc mv/ c static draintosource onresistance (v gs = 10 vdc, i d = 5.0 adc) r ds(on) 350 500 mohm draintosource onvoltage (v gs = 10 vdc, i d = 10 adc) (v gs = 10 vdc, i d = 5.0 adc, t j = 125 c) v ds(on) 6.0 5.3 vdc forward transconductance (v ds = 15 vdc, i d = 5.0 adc) g fs 2.0 7.0 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 1440 2020 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 360 500 transfer capacitance f = 1 . 0 mhz) c rss 15 30 switching characteristics (note 3.) turnon delay time t d(on) 10 20 ns rise time (v dd = 200 vdc, i d = 10 adc, v gs =10vdc t r 20 40 turnoff delay time v gs = 10 vdc, r g = 9.1 w) t d(off) 33 70 fall time r g 9.1 w) t f 24 50 gate charge q t 24 30 nc (v ds = 320 vdc, i d = 10 adc, q 1 6.0 (v ds 320 vdc , i d 10 adc , v gs = 10 vdc) q 2 7.0 q 3 12 sourcedrain diode characteristics forward onvoltage (note 2.) (i s = 10 adc, v gs = 0 vdc) (i s = 10 adc, v gs = 0 vdc, t j = 125 c) v sd 0.9 0.8 1.1 vdc reverse recovery time t rr 305 ns (i s 10 adc v gs 0 vdc t a 155 (i s = 10 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 150 reverse recovery stored charge di s /dt = 100 a/ m s) q rr 2.5 m c internal package inductance internal drain inductance (measured from contact screw on tab to center of die) (measured from the drain lead 0.25 from package to center of die) l d 3.5 4.5 nh internal source inductance (measured from the source lead 0.25 from package to source bond pad) l s 7.5 2. pulse test: pulse width 300 m s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature.
ntp10n40, NTB10N40 http://onsemi.com 3 package dimensions to220 threelead to220ab case 221a09 issue aa style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j d 2 pak case 418b03 issue d style 2: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
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